Ohmic Field Barriers and Electrical Repair Initialization Parameters
Electrical device tunneling and thermionic contributions are identified by the Arrhenius plots for hole transport of the nanotube contacts within the electrical channels. These plots are calculated by analyzing the current flux of the electrical hole transport region. The curves within the plots show the electrical barriers to hole and electron injection. Ohmic tunneling barriers can block electrical progression within the injections and are formed by chemically doping the planar contacts within each electrical device. The thermionic regime within the electrical hole transport region is composed of a set of s-SWNT barriers aligned with the zero field of the primary electrical current interface. Each barrier is symmetrical to the barriers generated by the electrical nanotube flux and the proof for this can be derived from the differential equations associated with the tunneling current flux. One of the key observations to draw from the Arrhenius plots of the electrical devices is t...